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The role of composition, morphology and crystalline structure in the electrochemical behaviour of TiN x thin films for dry electrode sensor materials

Cunha, L.T. INEB – Instituto de Engenharia Biomédica, Divisão de Biomateriais; Universidade do Porto, Rua do Campo Alegre, 823, 4150-180 Porto, Portugal Physics Department, University of Minho, Campus de Gualtar, 4710-057 Braga, Portugal; Tavares, C.J. Physics Department, University of Minho, Campus de Gualtar, 4710-057 Braga, Portugal; Fonseca, C. INEB – Instituto de Engenharia Biomédica, Divisão de Biomateriais; Universidade do Porto, Rua do Campo Alegre, 823, 4150-180 Porto, Portugal Universidade do Porto, Faculdade de Engenharia, Departamento de Engenharia Metalurgica e de Materiais, Rua Roberto Frias, s/n, 4200-465 Porto, Portugal cfonseca@ineb.up.pt; Alves, E. Instituto Tecnológico Nuclear, Department Física, E.N. 10, 2686-953 Sacavém, Portugal; Pedrosa, P. INEB – Instituto de Engenharia Biomédica, Divisão de Biomateriais; Universidade do Porto, Rua do Campo Alegre, 823, 4150-180 Porto, Portugal Physics Department, University of Minho, Campus de Gualtar, 4710-057 Braga, Portugal; Vaz, F. Physics Department, University of Minho, Campus de Gualtar, 4710-057 Braga, Portugal (2015-01-09)
Structure and magnetic properties of high coercive [PrFeB x /Cu] n films with out-of-plane orientation

Yang, F. Shenyang National Laboratory for Materials Science, Institute of Metal Research and International Centre for Materials Physics, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang Liaoning 110016, People's Republic of China; Zhao, X.G. Shenyang National Laboratory for Materials Science, Institute of Metal Research and International Centre for Materials Physics, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang Liaoning 110016, People's Republic of China; Liu, W. Shenyang National Laboratory for Materials Science, Institute of Metal Research and International Centre for Materials Physics, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang Liaoning 110016, People's Republic of China wliu@imr.ac.cn; Cui, W.B. Shenyang National Laboratory for Materials Science, Institute of Metal Research and International Centre for Materials Physics, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang Liaoning 110016, People's Republic of China; Yao, Q. Shenyang National Laboratory for Materials Science, Institute of Metal Research and International Centre for Materials Physics, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang Liaoning 110016, People's Republic of China; Zhang, Z.D. Shenyang National Laboratory for Materials Science, Institute of Metal Research and International Centre for Materials Physics, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang Liaoning 110016, People's Republic of China (2015-01-12)
Magnetic properties of Nd–Fe–B/FeMn multilayer films

Yang, F. Shenyang National Laboratory for Materials Science, Institute of Metal Research and International Centre for Materials Physics, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang 110016, People's Republic of China; Lv, X.K. Shenyang National Laboratory for Materials Science, Institute of Metal Research and International Centre for Materials Physics, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang 110016, People's Republic of China; Liu, W. Shenyang National Laboratory for Materials Science, Institute of Metal Research and International Centre for Materials Physics, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang 110016, People's Republic of China wliu@imr.ac.cn; Liu, X.H. Shenyang National Laboratory for Materials Science, Institute of Metal Research and International Centre for Materials Physics, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang 110016, People's Republic of China; Guo, S. Shenyang National Laboratory for Materials Science, Institute of Metal Research and International Centre for Materials Physics, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang 110016, People's Republic of China; Gong, W.J. Shenyang National Laboratory for Materials Science, Institute of Metal Research and International Centre for Materials Physics, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang 110016, People's Republic of China; Zhang, Z.D. Shenyang National Laboratory for Materials Science, Institute of Metal Research and International Centre for Materials Physics, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang 110016, People's Republic of China (2015-01-12)
Formation of F-doped ZnO transparent conductive films by sputtering of ZnF 2

Tsai, Yu-Zen Department of Electronic Engineering, Cheng Shiu University, Kaohsiung 83347, Taiwan, ROC naive@csu.edu.tw; Tsai, Chun-Lung Department of Electronic Engineering, Cheng Shiu University, Kaohsiung 83347, Taiwan, ROC; Wang, Na-Fu Department of Electronic Engineering, Cheng Shiu University, Kaohsiung 83347, Taiwan, ROC (2015-01-12)
Enhancement of the light trapping by double-layered surface texture of ITO/AZO and AZO/AZO transparent conductive films

Jiang, Q.J. State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China; Yuan, Y.L. State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China; Lu, J.G. State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China lujianguo@zju.edu.cn; Cai, H. State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China; Zhang, J. State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China; Deng, N. State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China; Ye, Z.Z. State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China (2015-01-26)
Effect of selenization time on the growth of Cu 2 ZnSnSe 4 thin films obtained from rapid thermal processing of stacked metallic layers

He, Jun Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Engineering, East China Normal University, Shanghai 200241, China; Meng, Xiankuan Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Engineering, East China Normal University, Shanghai 200241, China; Chu, Junhao Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Engineering, East China Normal University, Shanghai 200241, China; Dong, Yuchen Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Engineering, East China Normal University, Shanghai 200241, China; Tao, Jiahua Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Engineering, East China Normal University, Shanghai 200241, China; Zhang, Kezhi Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Engineering, East China Normal University, Shanghai 200241, China; Yang, Pingxiong Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Engineering, East China Normal University, Shanghai 200241, China; Sun, Lin Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Engineering, East China Normal University, Shanghai 200241, China lsun@ee.ecnu.edu.cn (2015-01-26)
Magnetic properties of R–Fe–B/Mn films with different structures

Yang, F. Shenyang National Laboratory for Materials Science, Institute of Metal Research and International Centre for Materials Physics, Chinese Academy of Sciences, Shenyang 110016, China Northwest Institute for Nonferrous Metal Research, Xi'an 710016, China; Liu, W. Shenyang National Laboratory for Materials Science, Institute of Metal Research and International Centre for Materials Physics, Chinese Academy of Sciences, Shenyang 110016, China wliu@imr.ac.cn; Zhang, Z.D. Shenyang National Laboratory for Materials Science, Institute of Metal Research and International Centre for Materials Physics, Chinese Academy of Sciences, Shenyang 110016, China (2015-01-12)
Preparation and properties of antiperovskite Mn 3 NiN thin film

Na, Yuanyuan Center for Condensed Matter and Materials Physics, Key Laboratory of Micro-Naro Measurement, Manipulation and Physics, Beihang University, Beijing 100191, PR China; Ding, Lei Center for Condensed Matter and Materials Physics, Key Laboratory of Micro-Naro Measurement, Manipulation and Physics, Beihang University, Beijing 100191, PR China; Chu, Lihua Center for Condensed Matter and Materials Physics, Key Laboratory of Micro-Naro Measurement, Manipulation and Physics, Beihang University, Beijing 100191, PR China; Chen, Xiaolong Institute of Physics, Chinese Academic of Sciences, P.O.Box 603, Beijing 100190, PR China; Yan, Jun Center for Condensed Matter and Materials Physics, Key Laboratory of Micro-Naro Measurement, Manipulation and Physics, Beihang University, Beijing 100191, PR China; Wang, Cong Center for Condensed Matter and Materials Physics, Key Laboratory of Micro-Naro Measurement, Manipulation and Physics, Beihang University, Beijing 100191, PR China congwang@buaa.edu.cn; Xue, Yafei Center for Condensed Matter and Materials Physics, Key Laboratory of Micro-Naro Measurement, Manipulation and Physics, Beihang University, Beijing 100191, PR China; Xie, Wanfeng College of Physics, Ludong University, Yantai 264025, PR China (2015-01-12)
Focused ion beam milled pattern structures induced by laser pulse on AgInSbTe phase change films

Dun, Aihuan Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China Graduate School of Chinese Academy of Sciences, Beijing 100039, China; Zhao, Hongxia Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China tulipzhao@163.com; Wei, Jingsong Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China (2015-01-12)
Highly efficient 1.53 μm luminescence in Er x Yb 2-x Si 2 O 7 thin films grown on Si substrate

Zheng, Jun State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China zhengjun@semi.ac.cn; Wang, Wei State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China; Tao, Yeliao State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China; Zhang, Lingzi State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China; Zuo, Yuhua State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China; Cheng, Buwen State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China; Xue, Chunlai State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China; Wang, Qiming State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China (2015-01-12)

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