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Structure and improved electrical properties of Pr-doped PbZrO 3 antiferroelectric thin films with (111) preferential orientation

Sa, Tongliang State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen University, Guangzhou 510275, PR China; Bao, Dinghua State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen University, Guangzhou 510275, PR China stsbdh@mail.sysu.edu.cn; Yang, Guowei State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen University, Guangzhou 510275, PR China; Qin, Ni State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen University, Guangzhou 510275, PR China (2015-01-13)

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Author
- Bao, Dinghua State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen University, Guangzhou 510275, PR China stsbdh@mail.sysu.edu.cn (1)
- Qin, Ni State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen University, Guangzhou 510275, PR China (1)
- Sa, Tongliang State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen University, Guangzhou 510275, PR China (1)
- Yang, Guowei State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen University, Guangzhou 510275, PR China (1)
Subject
- Chemical synthesis (1)
- Dielectric properties (1)
- Ferroelectricity (1)
- Thin films (1)
- ... View More
Date Issued
- 2015 (1)