Li, Kui
Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050, People's Republic of China; Costecalde, Jean
Institute of Electronics, Microelectronics and Nanotechnology (IEMN) – DOAE, UMR CNRS 8520, Université de Valenciennes et du Hainaut Cambrèsis Valenciennes 59313 cedex, France; Dong, Xianlin
Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050, People's Republic of China; Wang, Genshui
Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050, People's Republic of China
genshuiwang@mail.sic.ac.cn; Sama, Nossikpendou
Institute of Electronics, Microelectronics and Nanotechnology (IEMN) – DOAE, UMR CNRS 8520, Université de Valenciennes et du Hainaut Cambrèsis Valenciennes 59313 cedex, France; Rémiens, Denis
Institute of Electronics, Microelectronics and Nanotechnology (IEMN) – DOAE, UMR CNRS 8520, Université de Valenciennes et du Hainaut Cambrèsis Valenciennes 59313 cedex, France; Du, Gang
Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050, People's Republic of China; Li, Tao
Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050, People's Republic of China; Lei, Xiuyun
Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050, People's Republic of China
(2015-01-12)