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Improved optical transmittance of Al-doped ZnO thin films by use of ZnO nanorods

Lu, Wei-Lun Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, No. 1, University Road, Tainan City 701, Taiwan, ROC; Hung, Chen-I Department of Mechanical Engineering, National Cheng-Kung University, Tainan City 701, Taiwan, ROC; Yeh, Chih-Hung R&D Center, NexPower Technology Corporation, Taichung 421, Taiwan, ROC; Houng, Mau-Phon Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, No. 1, University Road, Tainan City 701, Taiwan, ROC mphoung@eembox.ncku.edu.tw; Hung, Pin-Kun Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, No. 1, University Road, Tainan City 701, Taiwan, ROC (2015-01-13)
Influence of annealing on the optical properties of reactively sputtered BCN thin films

Todi, Vinit O. Department of Electrical Engineering and Computer Science, University of Central Florida, Orlando, FL 32816, USA; Sundaram, Kalpathy B. Department of Electrical Engineering and Computer Science, University of Central Florida, Orlando, FL 32816, USA kalpathy.sundaram@ucf.edu; Shantheyanda, Bojanna P. Department of Electrical Engineering and Computer Science, University of Central Florida, Orlando, FL 32816, USA (2015-01-13)
Direct current sputtered aluminum-doped zinc oxide films for thin crystalline silicon heterojunction solar cell

Qiu, Yu Imec, Kapeldreef 75, 3001 Leuven, Belgium yuqiu@mail.sim.ac.cn; Poortmans, Jef Imec, Kapeldreef 75, 3001 Leuven, Belgium; Gordon, Ivan Imec, Kapeldreef 75, 3001 Leuven, Belgium; Hermawan, Henrico Imec, Kapeldreef 75, 3001 Leuven, Belgium (2015-01-13)
Structural, optical and hydrophilic properties of nanocrystalline TiO 2 ultra-thin films prepared by pulsed dc reactive magnetron sputtering

Horprathum, M. Optical Thin-Film Laboratory, National Electronics and Computer Technology Center, Pathumthani 12120, Thailand mati.horprathum@nectec.or.th; Nuntawong, N. Optical Thin-Film Laboratory, National Electronics and Computer Technology Center, Pathumthani 12120, Thailand; Limnonthakul, P. Department of Physics, Faculty of Science, Srinakharinwirot University, Bangkok 10110, Thailand; Chindaudom, P. Optical Thin-Film Laboratory, National Electronics and Computer Technology Center, Pathumthani 12120, Thailand; Eiamchai, P. Optical Thin-Film Laboratory, National Electronics and Computer Technology Center, Pathumthani 12120, Thailand; Pokaipisit, A. Department of Physics, Faculty of Science, King Mongkut's University of Technology Thonburi, Bangkok 10140, Thailand Thailand Center of Excellence in Physics, CHE, Ministry of Education, Bangkok 10400, Thailand; Limsuwan, P. Department of Physics, Faculty of Science, King Mongkut's University of Technology Thonburi, Bangkok 10140, Thailand Thailand Center of Excellence in Physics, CHE, Ministry of Education, Bangkok 10400, Thailand (2015-01-20)
Electrical, optical and microstructural properties of transparent conducting GZO thin films deposited by magnetron sputtering

You, Z.Z. College of Electronic Information Engineering, South-Central University for Nationalities (SCUN), Wuhan 430074, People's Republic of China zzyyyzz@163.com; Hua, G.J. Center of Computing and Experimenting, South-Central University for Nationalities (SCUN), Wuhan 430074, People's Republic of China (2015-01-20)
The influence of various sputtering parameters on structural, wettability and optical properties of Zr 2 ON 2 thin films

Rawal, Sushant K. Nano Science Laboratory, Institute Instrumentation Centre, Indian Institute of Technology Roorkee, Roorkee 247667, India CHAMOS Matrusanstha Department of Mechanical Engineering, C.S. Patel Institute of Technology, Charotar University of Science and Technology, Changa 388421, India; Jayaganthan, R. Department of Metallurgical and Materials Engineering, Indian Institute of Technology Roorkee, Roorkee 247667, India Centre of Nanotechnology, Indian Institute of Technology Roorkee, Roorkee 247667, India; Chandra, Ramesh Nano Science Laboratory, Institute Instrumentation Centre, Indian Institute of Technology Roorkee, Roorkee 247667, India ramesfic@iitr.ernet.in; Chawla, Amit Kumar Department of Physics, University of Petroleum and Energy Studies, Dehradun 248007, India (2015-01-26)
Effect of annealing temperature on the structure and optical properties of In-doped ZnO thin films

Peng, L.P. Department of Applied Physics, Chongqing University, Chongqing 400030, PR China; Wu, F. Department of Applied Physics, Chongqing University, Chongqing 400030, PR China; Fang, L. Department of Applied Physics, Chongqing University, Chongqing 400030, PR China Key Laboratory of Optoelectronic Technology and Systems of the Education Ministry of China, Chongqing University, Chongqing 400030, PR China fangliangcqu@yahoo.com.cn; Yang, X.F. Department of Applied Physics, Chongqing University, Chongqing 400030, PR China; Li, Y.J. Department of Applied Physics, Chongqing University, Chongqing 400030, PR China; Huang, Q.L. Department of Applied Physics, Chongqing University, Chongqing 400030, PR China; Kong, C.Y. Department of Applied physics, Chongqing Normal University, Chongqing 400047, PR China (2015-01-20)
Microwave absorption of ε-Fe 2 O 3 precipitated from sputter deposited Fe–Si–O amorphous thin film by thermal annealing

Sawada, Akinori Faculty of Engineering, Hokkaido University, N13W8, Kita-ku, Sapporo 060-8628, Japan; Kikkawa, Shinichi 0000-0002-3498-0735 Faculty of Engineering, Hokkaido University, N13W8, Kita-ku, Sapporo 060-8628, Japan kikkawa@eng.hokudai.ac.jp; Masubuchi, Yuji Faculty of Engineering, Hokkaido University, N13W8, Kita-ku, Sapporo 060-8628, Japan; Motohashi, Teruki Faculty of Engineering, Hokkaido University, N13W8, Kita-ku, Sapporo 060-8628, Japan; Sasaki, Masahide National Institute of Advanced Industrial Science and Technology, Hokkaido 2-17-2-1, Tsukisamu-Higashi, Toyohira-ku, Sapporo 062-8517, Japan (2015-01-26)
Sputter deposited transition metal nitrides as back electrode for CIGS solar cells

Mahieu, S. Department for Solid State Sciences, Ghent University, Krijgslaan 281 (S1), 9000 Ghent, Belgium; Wolter, M. Institute for Experimental and Applied Physics, University Kiel, D-24098 Kiel, Germany; Leroy, W.P. Department for Solid State Sciences, Ghent University, Krijgslaan 281 (S1), 9000 Ghent, Belgium; Depla, D. Department for Solid State Sciences, Ghent University, Krijgslaan 281 (S1), 9000 Ghent, Belgium diederik.depla@ugent.be; Colaux, J. Research Center in Physics of Matter and Radiation (PMR), University of Namur (FUNDP), 61 Rue de Bruxelles 5000 Namur, Belgium; Van Aeken, K. Department for Solid State Sciences, Ghent University, Krijgslaan 281 (S1), 9000 Ghent, Belgium; Lucas, S. Research Center in Physics of Matter and Radiation (PMR), University of Namur (FUNDP), 61 Rue de Bruxelles 5000 Namur, Belgium; Abadias, G. Institut P’, Département Physique et Mécanique des Matériaux, CNRS – Université de Poitiers, 86962 Futuroscope-Chasseneuil Cedex, France; Matthys, P. Department for Solid State Sciences, Ghent University, Krijgslaan 281 (S1), 9000 Ghent, Belgium (2015-01-10)
Fabrication study of proton injection layer suitable for electrochromic switchable mirror glass

Tajima, Kazuki Material Research Institute for Sustainable Development, National Institute of Advanced Industrial Science and Technology (AIST), Shimo-Shidami, Moriyama-ku, Nagoya, 463-8560, Japan k-tajima@aist.go.jp; Yoshimura, Kazuki Material Research Institute for Sustainable Development, National Institute of Advanced Industrial Science and Technology (AIST), Shimo-Shidami, Moriyama-ku, Nagoya, 463-8560, Japan; Okada, Masahisa Material Research Institute for Sustainable Development, National Institute of Advanced Industrial Science and Technology (AIST), Shimo-Shidami, Moriyama-ku, Nagoya, 463-8560, Japan; Yamada, Yasusei Material Research Institute for Sustainable Development, National Institute of Advanced Industrial Science and Technology (AIST), Shimo-Shidami, Moriyama-ku, Nagoya, 463-8560, Japan (2015-01-10)

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